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High performance silicon LDMOS technology for 2 GHz RF power amplifier applications

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3 Author(s)
Wood, A. ; Div. of Radio Frequency Semicond., Motorola Inc., Phoenix, AZ, USA ; Dragon, C. ; Burger, W.

The structure, device processing and performance of a 2 GHz, 60 Watt silicon LDMOS RF power transistor are described. At 2 GHz with a 26 Vdc drain operating voltage this device has 1 dB power gain compression at 63 Watts CW and 44% drain efficiency. Under two-tone test conditions, at 60 Watts peak output, 11.2 dB power gain is realized with less than -30 dBc intermodulation distortion and greater than 30% drain efficiency. Excellent linearity is maintained over a wide dynamic range.

Published in:

Electron Devices Meeting, 1996. IEDM '96., International

Date of Conference:

8-11 Dec. 1996