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The structure, device processing and performance of a 2 GHz, 60 Watt silicon LDMOS RF power transistor are described. At 2 GHz with a 26 Vdc drain operating voltage this device has 1 dB power gain compression at 63 Watts CW and 44% drain efficiency. Under two-tone test conditions, at 60 Watts peak output, 11.2 dB power gain is realized with less than -30 dBc intermodulation distortion and greater than 30% drain efficiency. Excellent linearity is maintained over a wide dynamic range.