Cart (Loading....) | Create Account
Close category search window
 

Directed growth characteristics and optoelectronic properties of Eu-doped ZnO nanorods and urchins

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Bayan, S. ; Nanoscience Laboratory, Department of Physics, Tezpur University, P.O. Napaam, Assam 784028, India ; Mohanta, D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3462396 

Inexpensive fabrication of europium (Eu3+)-doped zinc oxide (ZnO) nanoparticles, nanorods, and urchin systems obtained by rapid thermal annealing is being reported. The polyvinyl alcohol films containing a reactant mixture [Zn(CH3COO)2, Eu(CH3COO)3, and NaOH] were casted on Al-foils followed by thermal annealing at 80, 300, and 650 °C. Gradual change-over from spherically symmetric nanoparticles to nanorods along with urchin like structures are obtained under different annealing environment. The nanorods and urchins are expected to have grown as a result of spontaneous decomposition of Zn(OH)2 followed by unidirectional growth. The nanorods are dislodged from the regular urchin structures at a high annealing temperature of 650 °C because of the loss of the crystalline substrate support. The as-received ZnO products possessed hexagonal wurtzite structure for all the annealing cases-as evident from the x-ray diffraction patterns. The photoluminescence study on the samples has revealed dominant defect related emissions compared to the near band edge emission. The band edge emission (∼382 nm) is recovered in the urchin systems whereas Eu3+ related transitions observed at ∼591 nm (5D07F1) and ∼613 nm (5D07F2) rema- - ined intact with structural modification.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 2 )

Date of Publication:

Jul 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.