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Continuous-wave operation up to 36/spl deg/C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers

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3 Author(s)
Uchiyama, S. ; Optoelectron. Furukawa Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan ; Yokouchi, N. ; Ninomiya, T.

We introduced ion-beam assisted deposition in order to improve the quality of Al/sub 2/O/sub 3/ and SiO/sub 2/, which were used as part of the mirrors of 1.3-/spl mu/m GaInAsP-InP vertical-cavity surface-emitting lasers (VCSELs). The refractive index of Al/sub 2/O/sub 3/ was improved to 1.63 from 1.56 and the one of SiO/sub 2/ increased to 1.47 from 1.45. Low-threshold room-temperature continuous-wave (CW) operation of 1.3-/spl mu/m VCSEL with the improved mirrors was demonstrated. The threshold current was 2.4 mA at 20/spl deg/C. The CW operating temperature was raised to 36/spl deg/C, which is a record high temperature for 1.3-/spl mu/m VCSEL.

Published in:

Photonics Technology Letters, IEEE  (Volume:9 ,  Issue: 2 )

Date of Publication:

Feb. 1997

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