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Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI

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7 Author(s)
Ying-Keung Leung ; Center for Integrated Syst., Stanford Univ., CA, USA ; Kuehne, S.C. ; Huang, V.S.K. ; Nguyen, C.T.
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Temperature profiles resulting from self-heating in SOI-LDMOS devices with uniformly doped and linearly graded drift regions were measured using a resistance thermometry technique. Two-dimensional electrothermal device simulations were performed and the results agreed with the experiments. Because of the different power dissipation profiles, RESURF devices with a uniformly doped drift region assume a fairly uniform temperature distribution while devices with a linearly graded drift region have a much higher temperature rise near the source than the drain. This local hot spot near the source raises reliability issues in device design.

Published in:

Electron Device Letters, IEEE  (Volume:18 ,  Issue: 1 )