Referenced Items are not available for this document.
The authors' aim is to demonstrate the possibility of building high quality factor (Q) integrated inductors in the conventional complementary metal-oxide semiconductor (CMOS) process without any additional processes of previous papers, such as thick gold layer or multilayer interconnection. The comparative analysis is extensively carried out to investigate the detailed variation of Q performance according to inductor shape and substrate by varying the substrate resistivity with circular and rectangular shape. The high Q of nearly 12 is achieved from the fabricated inductors with 2 μm metal thickness on the 2 kΩ·cm silicon substrate using the CMOS process
Published in:
Microwave and Guided Wave Letters, IEEE
(Volume:7
,
Issue:
2
)
Date of Publication: Feb 1997
- Page(s):
- 45 - 47
- ISSN :
- 1051-8207
- INSPEC Accession Number:
- 5500161
- Digital Object Identifier :
- 10.1109/75.553054
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb 1997
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
