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AC hot-carrier-induced degradation in NMOSFETs with N/sub 2/O-based gate dielectrics

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3 Author(s)
Zeng, X. ; Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong ; Lai, P.T. ; Ng, W.T.

Frequency-dependent ac-stress-induced degradation in MMOSFETs with N/sub 2/O-grown and N/sub 2/O-nitrided gate oxides was investigated. Suppressed device degradation is observed in both N/sub 2/O-based devices as compared to SiO/sub 2/ device for frequency up to 100 kHz, which is attributed to nitrogen incorporation in the gate oxides, Moreover, when comparing the two N/sub 2/O-based oxides, N/sub 2/O-grown oxide device exhibits enhanced degradation than N/sub 2/O-nitrided oxide device. Charge pumping measurements reveal that N/sub 2/O-nitrided oxide has better immunity to interface-state and neutral-electron-trap generation under dynamic stress.

Published in:

Electron Device Letters, IEEE  (Volume:18 ,  Issue: 2 )