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Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 ^{\circ}\hbox {C}

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4 Author(s)
Cherenack, K.H. ; Textile Group Wearable Comput. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland ; Hekmatshoar, B. ; Sturm, J.C. ; Wagner, S.

We fabricated back-channel-cut and back-channel-passivated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on clear-plastic (CP) foil substrates using a silicon nitride (SiN) deposition temperature of 300°C. The TFTs were fabricated on CP and are as stable under high gate bias as TFTs made on glass substrates. A self-alignment technique was developed to align the channel passivation, the a-Si:H island, and the source/drain (S/D) terminals to the gate. Self-alignment allowed us to fabricate discrete TFTs across 7 7 × cm2 of a free-standing sheet of CP foil to reduce the TFT channel length L to 3 m and reduce the S/D overlap with the gate LSD to ~1. To test the self-alignment techniques, we fabricated ring oscillators on the CP substrates. These results show that it is possible to fabricate state-of-the-art self-aligned a-Si:H TFTs and TFT circuits on plastic substrates.

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Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 10 )