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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:11 Issue:6 Help

Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method

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4 Author(s)
Kanoh, H. ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan ; Sugiura, O. ; Breddels, P.A. ; Matsumura, Masakiyo

The application of chemical-vapor-deposited (CVD) amorphous-silicon and silicon-nitride films to active layers of thin-film transistors on a glass substrate is discussed. The maximum process temperature was 485 degrees C. The maximum field-effect mobility and the typical on-off current ratio were more than 0.9 cm/sup 2//V-s and 10/sup 6/, respectively. Advantages of applying the fully plasma-free CVD method in the amorphous-silicon thin-film transistor process are discussed.<>

Published in:
Electron Device Letters, IEEE  (Volume:11 ,  Issue: 6 )

Date of Publication: June 1990

Page(s):
258 - 260
ISSN :
0741-3106
INSPEC Accession Number:
3711877
Digital Object Identifier :
10.1109/55.55273
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
June 1990
Sponsored by :
IEEE Electron Devices Society

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