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A physical model for boron penetration through thin gate oxides from p/sup +/ polysilicon gates

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3 Author(s)
Pfiester, J.R. ; Motorola Inc., Austin, TX, USA ; Parrillo, L.C. ; Baker, F.K.

Based on numerical device and process simulation, it is shown that enhancement of the boron diffusivity by as much as 300 times in the thin gate oxide results in a very shallow exponential p-type profile in the underlying silicon substrate. The effect of fluorine and phosphorus coimplantation into the p-type polysilicon gate is modeled by changes in the boron diffusivity in the gate oxide and segregation at the polysilicon-oxide interface. An inverse PMOS short-channel behavior in which the threshold voltage becomes more negative with decreasing channel length is modeled by two-dimensional boron segregation effects caused by the poly gate oxidation.<>

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Electron Device Letters, IEEE  (Volume:11 ,  Issue: 6 )