Cart (Loading....) | Create Account
Close category search window
 

Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Chen, K.H. ; Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 ; Chang, C.Y. ; Leu, L.C. ; Lo, C.F.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3359603 

Reliability studies of InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) grown on GaAs substrates for high frequency/power applications are reported. The MHEMTs were stressed at a drain voltage of 3 V for 36 h, as well as undergoing a thermal storage test at 250 °C for 48 h. The drain current density of the MHEMTs at zero gate bias dropped about 12.5% after either the thermal storage experiment or dc stress. The gate current of the MHEMT devices with thermal storage was much higher than that of devices after dc stress. In the latter case, significant gate sinking was observed by transmission electron microscopy. The main degradation mechanism during thermal storage was the reaction of the Ohmic contact with the underlying semiconductor.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 2 )

Date of Publication:

Mar 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.