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InGaP/GaAs/InGaAs doped-channel field-effect transistor using camel-like gate structure

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5 Author(s)
Jung-Hui Tsai ; Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung, Taiwan ; Guo, Der‐Feng ; Yuan-Hong Lee ; Ning-Feng Dale
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In this article, we first fabricate and demonstrate the InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic heavy-doped channel. Due to the large gate potential barrier for the use of the n+-GaAs/p+-InGaP/n-GaAs camel-like gate and the thin as well as heavy doping n+-InGaAs channel layer, the effective conduction band discontinuity (ΔEc) is substantially extended and a high gate turn-on voltage up to 2.0 V is obtained. The device exhibits a relatively broad gate voltage swing resulting from the high gate turn-on voltage. In addition, a maximum drain current of 393 mA/mm and a maximum transconductance of 96 mS/mm are measured. These results indicate that the studied device is suitable for signal amplifier and linear circuit applications.

Published in:

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Date of Conference:

8-11 May 2010