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Critical Cu concentration of enhanced oxidation generation on thin film SOI wafer

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3 Author(s)
Okonogi, K. ; ULSI Device Dev. Labs., NEC Corp., Kanagawa, Japan ; Kikuchi, H. ; Kitano, T.

Examines relationship between enhanced oxide density and Cu concentration for various thicknesses of SOI layers. It is found that the decrease in SOI layer thickness causes the decrease in critical Cu concentration for enhanced oxidation generation. Furthermore, it is found that Cu concentration close to contaminant level of current ULSI device fabrication process causes enhanced oxidation on SOI wafers with 0.1 μm SOI layer. It is necessary to pay attention to Cu contamination on SOI wafers with 0.1 μm SOI layer during ULSI device fabrication process

Published in:

SOI Conference, 1996. Proceedings., 1996 IEEE International

Date of Conference:

30 Sep-3 Oct 1996