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High gain wideband amplifier IC using 0.7 mu m GaAs MESFET technology

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4 Author(s)
T. Kinoshita ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; K. Yamashita ; N. Kotera ; M. Maeda

A high gain wideband differential amplifier with a new circuit configuration is proposed and monolithically integrated by using 0.7 mu m-gate GaAs MESFET IC technology. The fabricated IC exhibited gain of 16.7 dB and bandwidth of 3.2 GHz. A gain twice that of a conventional differential GaAs-MESFET amplifier was achieved with small bandwidth degradation.<>

Published in:

Electronics Letters  (Volume:24 ,  Issue: 2 )