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Nanocrystalline Piezoresistive Polysilicon Film by Aluminum-Induced Crystallization for Pressure-Sensing Applications

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3 Author(s)
Patil, S.K. ; Mater. Sci. & Eng. Dept., Univ. of Texas at Arlington, Arlington, TX, USA ; Çelik-Butler, Z. ; Butler, D.P.

Nanocrystalline piezoresistive polysilicon films were obtained at low temperatures by aluminum-induced crystallization (AIC). The films exhibited granular structure with good polycrystalline properties. A piezoresistive pressure sensor was fabricated on a polyimide substrate, in a Wheatstone bridge configuration comprising two passive resistors and two active piezoresistors made of polysilicon films obtained by AIC. The resistors showed linear I-V characteristics with typical resistance values between 15 and 30 kΩ . Atomic force microscopy was used in contact mode to study the response of the pressure sensor with applied pressure in the 2-19 kPa range. For the higher range of 450 kPa-2 MPa, a load-cell with a nanopositioner was utilized. The pressure-sensor sensitivity was measured to be 41.12 and 5.02 mV/MPa, respectively, for these ranges, when the Wheatstone bridge was bias at 1 V.

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Nanotechnology, IEEE Transactions on  (Volume:9 ,  Issue: 5 )