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Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors

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2 Author(s)
Kangmin Kim ; Samsung Electron., Asan, South Korea ; Youngmin Kim

We present the intrinsic capacitance characteristics of a pentacene-based polystyrene-gate organic thin-film transistor (OTFT). Intrinsic capacitance values (CGD, CGS) at each terminal of the OTFT were experimentally measured for various frequencies and dc bias voltages. The measured results illustrate that the intrinsic capacitance of an OTFT can be understood by considering a charge control mechanism, suggesting the validity of Meyer's capacitance model for the charge storage effect of OTFTs.

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Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 9 )