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Highly Reliable Amorphous Silicon Gate Driver Using Stable Center-Offset Thin-Film Transistors

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4 Author(s)
Jae Won Choi ; Adv. Display Res. Center, Kyung Hee Univ., Seoul, South Korea ; Jae Ik Kim ; Se Hwan Kim ; Jin Jang

This paper reports a highly reliable hydrogenated amorphous silicon (a-Si:H) gate driver using center-offset thin-film transistors (TFTs). The a-Si:H TFTs with a center-offset structure are demonstrated to be highly reliable compared to a conventional a-Si:H TFT. The Vth shift of center-offset a-Si:H TFTs was found to be 35% less than that of the conventional a-Si:H TFT. Therefore, the center-offset a-Si:H TFTs are used as pull-down TFTs in the gate driver circuit. When the center-offset pull-down TFTs are used in the a-Si:H gate driver, the output off-state of the gate driver remains stable for periods longer than 3 × 108 s.

Published in:

Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 9 )

Date of Publication:

Sept. 2010

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