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Compact Charge Model for Independent-Gate Asymmetric DGFET

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3 Author(s)
Dessai, G. ; Sch. of Electr., Comput. & Energy Eng., Arizona State Univ. (ASU), Tempe, AZ, USA ; Weimin Wu ; Gildenblat, G.

Analytical expressions for terminal charges of an independent-gate asymmetric double gate MOSFET (DGFET) are derived. The new charge model is C continuous, valid for all bias conditions and does not involve charge-sheet approximation. This is accomplished by developing the symmetric linearization method in the form that does not require identical boundary conditions at the two Si-SiO2 interfaces and allows for the volume inversion in the DGFET channel. Verification of the model is performed with both numerical computations and 2D TCAD simulations under a wide range of biasing conditions. The terminal charges expressions are similar to those in the PSP bulk MOSFET model and in the PSP-based common-gate symmetric DGFET model. The latter becomes a special case of the new model.

Published in:

Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 9 )

Date of Publication:

Sept. 2010

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