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Structure and Ultraviolet Electroluminescence of n \hbox {-ZnO/SiO}_{2}\hbox {-ZnO} Nanocomposite/ p -GaN Heterostructure Light-Emitting Diodes

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9 Author(s)
Miin-Jang Chen ; Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan ; Ying-Tsang Shih ; Mong-Kai Wu ; Hsing-Chao Chen
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We fabricated and characterized ultraviolet (UV) light-emitting diodes (LEDs) composed of n-ZnO/SiO2-ZnO nanocomposite/p-GaN heterostructures. Significant UV electroluminescence at 387 nm from the n-ZnO layer in this heterostructure LED was observed at a forward-bias current of as low as 1.8 mA. This is ascribed to the high quality of the n-ZnO layer and the effective function of the SiO2-ZnO nanocomposite layer. The SiO2-ZnO nanocomposite layer accomplishes the role of current blocking by forming the larger energy barrier for electron injection from n-ZnO into p -GaN and also contributes to, due to its low refractive index, higher light extraction efficiency from the n-ZnO layer.

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IEEE Transactions on Electron Devices  (Volume:57 ,  Issue: 9 )