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Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

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3 Author(s)
Hangbing Lv ; Microelectron. Dept., Fudan Univ., Shanghai, China ; Wan, Haijun ; Tang, Tingao

Broad dispersions of operation parameters are generally observed with continuous resistive switching. In this letter, we explore a prototype resistive random access memory (RRAM) device for switching uniformity improvement. Compared with Al/CuxO/Cu structure, by introducing a thin phase-change Ge2Sb2Te5 (GST) film between CuxO and Al top electrode, the device exhibits much better resistive hysteresis and switching uniformity. A combined filamentary conduction model is proposed to clarify the role of GST layer on the resistive switching stabilization.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 9 )

Date of Publication:

Sept. 2010

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