By Topic

Reactive-ion-etched diffraction-limited unstable resonator semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
S. A. Biellak ; Center for Integrated Syst., Stanford Univ., CA, USA ; C. G. Fanning ; Y. Sun ; S. S. Wong
more authors

We present characterization and analysis of wide-stripe unstable resonator semiconductor lasers with reactive-ion-etched facets. The mirror facets have RMS roughnesses of only 3-5 mm. Laser beam quality and brightness performance are measured in terms of resonator structure and fabrication parameters. Lateral M2 values as low as 1.25 at five times threshold are found. This data is compared to that derived from a Huygen's integral-beam propagation method simulation which includes appropriate physical and process-induced aberrations, and good agreement is found

Published in:

IEEE Journal of Quantum Electronics  (Volume:33 ,  Issue: 2 )