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Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance

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3 Author(s)
Ganapathi, K. ; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA ; Yoon, Youngki ; Salahuddin, Sayeef

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3466908 

Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and steeper subthreshold swing as compared to conventional tunneling transistors. This is due to an additional tunneling contribution to current stemming from band overlap along the body thickness. However, a critical thickness is necessary to obtain this advantage derived from “vertical” tunneling. In addition, in ultra small InAs TFET devices, the subthreshold swing could be severely affected by direct source-to-drain tunneling through the body.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 3 )

Date of Publication:

Jul 2010

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