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High-index-contrast ridge waveguide laser with thermally oxidised etched facet and metal reflector

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2 Author(s)
Seibert, C.S. ; Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA ; Hall, D.C.

A novel GaAs-based high-index-contrast ridge waveguide quantum well heterostructure laser is demonstrated, which features an etched and wet thermally oxidised rear facet with a deposited metal mirror suitable for wafer scale integration. The self-aligned fabrication process utilises a single deep etch step and oxygen-enhanced non-selective wet oxidation of the AlGaAs heterostructure ridge sidewall and the entire exposed facet, including the waveguide core region composed of low-Al content AlGaAs material not readily oxidised by conventional techniques. Singlemode devices exhibiting thresholds as low as 20 mA at 808 nm are demonstrated.

Published in:

Electronics Letters  (Volume:46 ,  Issue: 15 )

Date of Publication:

July 22 2010

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