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The realisation of a GaAs-based distributed feedback laser based upon regrowth of standard AlGaAs upper cladding upon patterned InGaP is presented. Regrowth upon exposed AlGaAs surfaces during its fabrication is avoided. Gratings technology is applied to an In0.17Ga0.83As double quantum well laser emitting at 1 μm and demonstrates ~30 dB sidemode suppression with as-cleaved facets.
Date of Publication: July 22 2010