Cart (Loading....) | Create Account
Close category search window
 

Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yeonghun Lee ; Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan ; Kakushima, K. ; Shiraishi, K. ; Natori, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3464320 

We carried out a comprehensive study on the impact of size-dependent subband structures on the ballistic silicon nanowire transistors. One of the prominent features was that the injection velocity could be improved, owing to the increase in the source Fermi level measured from the conduction band edge. Moreover, because of the trade-off between the density of states and the gate capacitance, the source Fermi level showed a peak, indicating the optimum wire size for a field-effect transistor. Finally, our results revealed that this trade-off relationship as a feature in nanowire transistors should be considered for the size-dependent performance assessment.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 3 )

Date of Publication:

Jul 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.