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Reflection high-energy electron diffraction Φ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy

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3 Author(s)
Gao, Cunxu ; Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany ; Schonherr, Hans-Peter ; Brandt, Oliver

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The heteroepitaxial growth of Fe films on GaN(0001) by molecular beam epitaxy is monitored in situ by reflection high-energy electron diffraction Φ scans. The complex epitaxial orientation-relationship between Fe and GaN can be visualized by these Φ scans already at an Fe coverage of two monolayers. By comparing the data to ex situ x-ray Φ scans, we show that these measurements even allow a quantitative determination of the in-plane orientation-distribution of the heteroepitaxial film. The orientation-distribution is minimized for a growth temperature of 350 °C.

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Applied Physics Letters  (Volume:97 ,  Issue: 3 )