By Topic

Reflection high-energy electron diffraction Φ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Gao, Cunxu ; Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany ; Schonherr, Hans-Peter ; Brandt, Oliver

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The heteroepitaxial growth of Fe films on GaN(0001) by molecular beam epitaxy is monitored in situ by reflection high-energy electron diffraction Φ scans. The complex epitaxial orientation-relationship between Fe and GaN can be visualized by these Φ scans already at an Fe coverage of two monolayers. By comparing the data to ex situ x-ray Φ scans, we show that these measurements even allow a quantitative determination of the in-plane orientation-distribution of the heteroepitaxial film. The orientation-distribution is minimized for a growth temperature of 350 °C.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 3 )