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Injection-Locked CMOS Frequency Doublers for \mu -Wave and mm-Wave Applications

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4 Author(s)
Monaco, E. ; Ist. Univ. Studi Superiori di Pavia, Univ. degli Studi di Modena e Reggio Emilia, Pavia, Italy ; Pozzoni, M. ; Svelto, F. ; Mazzanti, A.

On-chip frequency generators for high frequency applications suffer from degradation of key passive components, variable capacitors in particular. In this framework, frequency multipliers can play a key role, allowing the design of voltage-controlled oscillators running at a frequency lower than required with advantage in terms of signal spectral purity and frequency tuning range. In this paper we present two injection locked frequency doublers for Ku-band and F-band applications respectively. Despite differences in implementation details, the same topology where a push-push pair injects a double frequency tone locking an autonomous differential oscillator is adopted. The circuits require limited input signal swing and provide a differential output over a broad frequency range. Dissipating 5.2 mW, the Ku-band multiplier, realized in a 0.13 μm CMOS node, displays an operation bandwidth from 11 GHz to 15 GHz with a peak voltage swing on each output of 470 mV. The F-band multiplier, realized in 65 nm CMOS technology, displays an operation bandwidth from 106 GHz to 128 GHz with a peak voltage swing on each output of 330 mV and a power dissipation of 6 mW. A prototype including the multiplier, driven by a half-frequency standard LC-tank VCO, demonstrates an outstanding 13.1% tuning range around 115 GHz.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:45 ,  Issue: 8 )

Date of Publication:

Aug. 2010

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