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Low-Gas-Pressure Sputtering of CoPtCr– \hbox {SiO}_2 Granular Films Made by a Sintered Target Without \hbox {SiO}_2 Powder

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3 Author(s)
Sasaki, S. ; Dept. of Intell. Syst. Eng., Ichinoseki Nat. Coll. of Technol., Ichinoseki, Japan ; Saito, S. ; Takahashi, M.

A new low-Ar-gas-pressure (PAr) sputtering process is proposed for the preparation of granular metal-oxide films for use as perpendicular magnetic recording media. CoO and CoSi powders were used as the raw materials of the sintered target rather than SiO2 powder to obtain the O/Si ratio to 2 in a granular film under low PAr process. Strongly exchange-coupled media were obtained at PAr = 0.6 Pa using a conventional (Co)-(Pt)-(Cr)-(SiO2) target, while use of the proposed (Co)-(Pt)-(Cr)-(CoSi)-enriched(CoO) target adjusted the oxygen composition in the granular film, which resulted in the successful fabrication of well magnetically decoupled media at PAr = 0.6 Pa.

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Magnetics Letters, IEEE  (Volume:1 )