By Topic

A Novel Characterization Scheme of \hbox {Si/SiO}_{2} Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Zhao, Yi ; Sch. of Eng., Univ. of Tokyo, Tokyo, Japan ; Matsumoto, H. ; Sato, T. ; Koyama, S.
more authors

In this paper, a novel method to directly determine the surface roughness scattering-limited mobilities (μsr) of electrons and holes in Si MOSFETs from the experimental data of MOS interface roughness is proposed and compared with the experimental μsr of Si MOSFETs with and without biaxial tensile strain. This method includes the direct evaluation of the scattering potential from the power spectra of Si/SiO2 interface roughness data, which are taken through high-resolution advanced transmission electron microscopy measurements, without assuming any autocorrelation function form of the interface roughness, like a Gaussian or exponential function. It is found, for the first time, that, by employing the present method, experimental electron and hole μsr (both unstrained and strained Si) could be presented by a same model. As a result, the difference in strain dependence between electron and hole μsr, which has experimentally been observed, is systematically explained by the change of power spectra of the interface roughness due to strain.

Published in:

Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 9 )