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Flexible Resistive Switching Memory Device Based on Graphene Oxide

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5 Author(s)
Seul Ki Hong ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea ; Ji Eun Kim ; Sang Ouk Kim ; Sung-Yool Choi
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A resistive switching memory device based on graphene oxide (GO) is presented. It is found that the resistive switching characteristic has a strong dependence on electrode material and GO thickness. In our experiment, an Al/GO/ITO structure with 30-nm-thick GO shows good switching performance with an on/off resistance ratio of 103, low set/reset voltage, and excellent data retention. The GO memory is also fabricated on a flexible substrate with no degradation in switching property, even when the substrate is bent down to 4-mm radius, indicating that the GO memory is an excellent candidate to be a memory device for future flexible electronics.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 9 )

Date of Publication:

Sept. 2010

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