By Topic

Strategies for addressing linearity issues in active device modeling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Mediavilla, A. ; Univ. of Cantabria, Santander, Spain ; Garcia, J.A. ; Cabria, L. ; Marante, F.R.

Microwave active-circuit design at the semiconductor level has been proposed as a real alternative for addressing the linearity versus efficiency trade-off in wireless applications, mainly when the use of traditional system-level architectures may be prohibitive due to cost or complexity. A wide set of techniques are available from the control of the transistor physics to device-based implementations of system concepts. This presentation will firstly discuss on what are the necessary measurements and model strategies to build a semiconductor model able to predict intermodulation distortion behavior. Furthermore, attention will be focused on the selection of optimum operating conditions, the adaptation of bias and load to the input signal envelope, and the use of auxiliary devices for creating an approximated compound linear transistor. Finally, the integration of these semiconductor-based approaches in printed radiators and arrays will also be considered.

Published in:

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Date of Conference:

23-28 May 2010