By Topic

Empirical modeling of GaN FETs for nonlinear microwave circuit applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Santarelli, A. ; Univ. of Bologna, Italy ; Di Giacomo, V.

A new approach for the electro-thermal modeling of GaN FETs is presented. The model is identified on-wafer through static I/V curves measured at different base plate temperatures and small-signal parameters. Improvements in the prediction of the dc drain current component under large-signal operation can be obtained by taking into account nonlinear dynamics of charge trapping phenomena. The use of measured pulsed-I/V characteristics is avoided in the model extraction phase. Identification procedures and a wide experimental validation for a 0.25 um AlGaN/GaN HEMT on SiC with 600 um periphery are provided in the paper.

Published in:

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Date of Conference:

23-28 May 2010