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A high power-handling RF MEMS tunable capacitor using quadruple series capacitor structure

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8 Author(s)
Hiroaki Yamazaki ; Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, Yokohama 235-8522, Japan ; Tamio Ikehashi ; Tomohiro Saito ; Etsuji Ogawa
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This paper presents an RF MEMS tunable capacitor that achieves an excellent power-handling property with relatively low actuation voltage. The tunable capacitor consists of two fixed MIM (Metal-Insulator-Metal) capacitors and two MEMS capacitor elements, all connected in series. This quadruple series capacitor (QSC) structure enables reduction of the actuation voltage without sacrificing the power-handling capability, since the MIM capacitor reduces the RF voltage amplitude applied to the MEMS capacitors. The measured result demonstrates +36 dBm hot-switching at 85°C with 21V pull-in voltage.

Published in:

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Date of Conference:

23-28 May 2010