By Topic

A 15-50 GHz broadband resistive FET ring mixer using 0.18-µm CMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Jung-Hau Chen ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Che-Chung Kuo ; Yue-Ming Hsin ; Huei Wang

A compact and broadband 15 to 50 GHz resistive FET ring mixer using 0.18-μm CMOS technology is presented in this letter. This mixer exhibits a conversion loss of 13-17 dB and the port to port isolations of better than 30 dB from 15-50 GHz for both down and up-conversion with a chip size of 0.2 mm2. Besides, this mixer has an input P1dB of 4-10 dB and an IF bandwidth of 5 GHz. To the author's knowledge, this is the highest frequency MMIC resistive FET ring mixer using CMOS technologies to date.

Published in:

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Date of Conference:

23-28 May 2010