By Topic

High-efficiency broadband power amplifier design technique based on a measured-load-line approach

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Sergio Di Falco ; University of Ferrara, Department of Engineering, Via Saragat,1 - 44122, Italy ; Antonio Raffo ; Francesco Scappaviva ; Davide Resca
more authors

The paper presents an innovative power amplifier design technique oriented to microwave applications which require both high efficiency and large bandwidth. The approach is based on a recently proposed technique which, by exploiting a direct low-frequency nonlinear electron device characterization in conjunction with a model-based description of the device capacitances, achieves the same level of accuracy provided by expensive nonlinear setups operating at microwave frequencies. As a tough test-bench, a commercially available discrete power GaN FET has been adopted.

Published in:

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Date of Conference:

23-28 May 2010