By Topic

A C-band GaAs-pHEMT MMIC low phase noise VCO for space applications using a new cyclostationary nonlinear noise model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Florian, C. ; University of Bologna, Italy ; Traverso, P.A. ; Feudale, M. ; Filicori, F.

This paper describes the design of a C-band MMIC VCO for space applications. It exploits a single device with a microstrip resonator coupled with varactors. The technology is a space-qualified GaAs 0.25-um pHEMT process. The MMIC exhibits 350-MHz bandwidth at 7.3 GHz, with 14 dBm output power and −86 dBc/Hz single side-band phase noise (PN) at 100 kHz from the carrier. Performances are in good agreement with simulations. The active device was characterized in terms of low-frequency noise in quiescent operation and its up-conversion into PN under large-signal RF oscillating conditions, using in-house developed measurement setups. A new compact nonlinear noise model was identified and exploited for PN simulations. The model features cyclostationary equivalent noise generators. Comparisons between measurements and simulations show that the nonlinear cyclostationary modeling approach is more accurate rather than conventional noise models in oscillator PN analyses of pHEMT circuits

Published in:

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Date of Conference:

23-28 May 2010