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A low stress switch applied on the optical network based upon CMOS-MEMS common process

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3 Author(s)
Chien-Chung Tsai ; Dept. of Optoelectron. Syst. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan ; Shang-Che Tsai ; Chi-Tsang Liu

A low stress switch applied on the optical network based upon CMOS-MEMS common process was proposed in this study. The effects of the width of lateral connection arm, the lengths of longitudinal connection arm and the supporting arm on the displacement of out of plane and the lateral stress of the device were investigated to find the optimum dimension through the study of simulation. The maximum displacement of the optimum design was achieved to 41.9 μm and the tilt angle was 6.47°. The surface deformation of the micro mirror was 0.00056 μm/μm. The maximum lateral stress was 132.1 MPa located on the PolySi layer, and that was far lower than the ultimate stress of PolySi. The threshold voltage of Poly 1 layer in the process was 5.2 V after the electrical measurement of the released device, when the optical device was loaded on the thermal actuator.

Published in:

Industrial Electronics and Applications (ICIEA), 2010 the 5th IEEE Conference on

Date of Conference:

15-17 June 2010