Skip to Main Content
This paper describes the design of a current mode bandgap for RFID applications. Its temperature compensation network can be set between two states which enables different compensation criteria. In the first state the temperature dependent behavior is optimized around ambient temperature, in the other state a better adaption at the higher temperature range can be achieved. The chip is designed in a 0.13 μm CMOS technology. It was developed at the Institute for Electronics Engineering within the scope of a research project supported by the Bavarian Research Foundation.