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THz generation based on Gunn oscillations in GaN planar asymmetric nanodiodes

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5 Author(s)
T. González ; Departamento de Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain ; I. Íñiguez-de-la-Torre ; D. Pardo ; A. M. Song
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By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar GaN nanodiodes for the development of Gunn oscillations. For channel lengths about 1 μm, oscillation frequencies around 400 GHz are predicted, reaching more than 600 GHz for 0.5 μm. The DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies in GaN diodes. By simulating two diodes in parallel, we analyze the possible loss of efficiency due to the technological dispersion in channel lengths.

Published in:

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Date of Conference:

May 31 2010-June 4 2010