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Optical characterization of InGaAsP/InAlAsP multiple quantum wells grown by MBE for 1 μm wavelength region

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3 Author(s)
Yamamoto, T. ; Frontier Sci. Innovation Center, Osaka Prefecture Univ., Sakai, Japan ; Kayama, M. ; Kawamura, Y.

InGaAsP/InAlAsP multiple quantum wells (MQWs) for 1 μm wavelength region optical modulators were proposed and were grown by molecular beam epitaxy (MBE). Optical properties, such as photoluminescence and optical absorption of InAlAsP layers, InGaAs/InAlAsP MQW layers and InGaAsP/InAlAsP MQW layers were studied in detail. A clear absorption edge was observed at about 1.06 μm for InGaAsP/InAlAsP MQW layers.

Published in:

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Date of Conference:

May 31 2010-June 4 2010

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