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Optical characterization of InGaAsP/InAlAsP multiple quantum wells grown by MBE for 1 μm wavelength region

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3 Author(s)
T. Yamamoto ; Frontier Science Innovation Center, Osaka Prefecture University, 1-2 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8570, Japa ; M. Kayama ; Y. Kawamura

InGaAsP/InAlAsP multiple quantum wells (MQWs) for 1 μm wavelength region optical modulators were proposed and were grown by molecular beam epitaxy (MBE). Optical properties, such as photoluminescence and optical absorption of InAlAsP layers, InGaAs/InAlAsP MQW layers and InGaAsP/InAlAsP MQW layers were studied in detail. A clear absorption edge was observed at about 1.06 μm for InGaAsP/InAlAsP MQW layers.

Published in:

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Date of Conference:

May 31 2010-June 4 2010