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Optical and electrical properties of InP porous structures formed on P-N substrates

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4 Author(s)
Hiroyuki Okazaki ; Research Center for Integrated Quantum Electronics, Hokkaido University North 13 West 8, Kita-ku, Sapporo, 060-8628 Japan ; Taketomo Sato ; Naoki Yoshizawa ; Tamotsu Hashizume

We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-density array of straight pores with 150nm diameter and 5000nm depth was formed by the electrochemical anodization process, where the pore depth could be controlled by the anodization time in the n-type layer. The present p-n InP porous structures show the low optical reflectance in UV-, visible- and near-infrared region. The current transport properties clearly show the rectifying behavior. These features are very promising for practical application to high-efficiency photo-sensitive devices.

Published in:

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Date of Conference:

May 31 2010-June 4 2010