Referenced Items are not available for this document.
Analysis of PIN diode's geometric effects on the performance of RF switches is presented with measured data. The impact of periphery-to-area ratio (P/A) is investigated in terms of forward bias resistance and linearity. Theoretical analysis shows the smaller periphery-to-area ratio of PIN diode can reduce not only the forward biased resistance, but also the power handling capability. In addition, positive bias to the PIN diode's cathode terminal can reduce the effects of Psub-Nwell parasitic diodes, leading to enhanced linearity. Fabricated in a standard 0.18-μm SiGe BiCMOS technology, the 50 μm2 PIN Single-pole-single-throw (SPST) RF switch MMIC can achieve an insertion loss of less than 0.69 dB from 2 to 18 GHz with the measured P1dB of 16 dBm.
Published in:
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Date of Conference: 23-28 May 2010
- Page(s):
- 948 - 951
- ISSN :
- 0149-645X
- E-ISBN :
- 978-1-4244-6057-1
- Print ISBN:
- 978-1-4244-6056-4
- INSPEC Accession Number:
- 11452768
- Conference Location :
- Anaheim, CA
- Digital Object Identifier :
- 10.1109/MWSYM.2010.5515901
- Product Type:
- Conference Publications
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