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High slew-rate, high gain operational amplifier driving large capacitive loads in a BiCMOS high voltage technology

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3 Author(s)
Boni, A. ; Dipartimento di Ingegneria dell''Inf., Parma Univ., Italy ; Togni, G. ; Morandi, C.

This paper describes the design and implementation of a high slew rate, high gain Operational Amplifier in a 3 μm high voltage BiCMOS process. A BiCMOS differential pair and an inverter gain stage with P-MOS cascode load is used in order to achieve a slew rate of about 50 V/μs and a DC open loop gain of 112 dB. A novel BiCMOS output buffer which can drive capacitive loads from 0 to 200 pF is introduced. A comparison between the proposed amplifier and two amplifiers available in the cell library of the used technology is presented: it demonstrates the excellent performance of the proposed amplifier in term of slew rate, capacitance driving capability, open loop DC gain and CMRR

Published in:

Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean  (Volume:1 )

Date of Conference:

13-16 May 1996

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