By Topic

Novel wide band high-efficiency active harmonic injection power amplifier concept

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Abdullah AlMuhaisen ; Centre for High Frequency Engineering, Cardiff School of Engineering, Cardiff University, UK ; Peter Wright ; J. Lees ; P. J. Tasker
more authors

This paper introduces a novel approach for the realization of wide band (>octave) high-efficiency (>95%) high Power Amplifiers (PAs). The proposed concept utilizes active harmonic injection to achieve the appropriate waveform shaping of the voltage/current waveforms necessary to deliver simultaneously both high power and high efficiency operation. The new PA structure thus consists of two parallel PAs where the main PA generates fundamental power and an auxiliary PA injects a harmonic signal at the output of the main PA to perform waveform shaping. An active harmonic injection PA circuit designed around the 10 W GaN transistor is demonstrated, along with the basic mathematical analysis and computer simulation of this new mode of operation. The measured performance of the PA demonstrator realized at 0.9 GHz provided a drain efficiency of 74.3% at P1dB, validating the concept and its potential.

Published in:

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Date of Conference:

23-28 May 2010