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Wideband power amplifier MMICs utilizing GaN on SiC

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4 Author(s)
Eli Reese ; TriQuint Semiconductor, Richardson, Texas, 75080, USA ; Donald Allen ; Cathy Lee ; Tuong Nguyen

The application of GaN on SiC technology to wideband power amplifier MMICs is explored. The unique characteristics of GaN on SiC applied to reactively matched and distributed wideband circuit topologies are discussed, including comparison to GaAs technology. A 2 - 18 GHz 11W power amplifier MMIC is presented as an example.

Published in:

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Date of Conference:

23-28 May 2010