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High-Performance n-Channel Organic Thin-Film Transistor for CMOS Circuits Using Electron-Donating Self-Assembled Layer

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3 Author(s)
Kim, Sung Hoon ; Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea ; Lee, Sun Hee ; Jin Jang

We introduce an electron-donating self-assembled monolayer (SAM) to improve the performance of solution-processed n-channel organic thin-film transistor (OTFT) using an organic semiconductor (OS) of an N, N' bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2). The OTFTs without SAM, with electron-withdrawing, and electron-donating layers, exhibited field-effect mobility of 0.02, 0.01, and 0.33 cm2/(V·s), respectively. The electron-donating thiophenol layer on source/drain electrodes shows a small injection barrier of 0.05 eV to the n-type OS and thus, exhibited field-effect mobility of 0.33 cm2/(V·s) and threshold voltage of -1.1 V.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 9 )