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\hbox {PbZr}_{x}\hbox {Ti}_{1 - x}\hbox {O}_{3} Ferroelectric Thin-Film Capacitors for Flexible Nonvolatile Memory Applications

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6 Author(s)
Jonghyun Rho ; Sch. of Adv. Mater. Sci. & Eng., Sungkyunkwan Univ., Suwon, South Korea ; Sang Jin Kim ; Wook Heo ; Nae-Eung Lee
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This letter reports the fabrication of PbZrxTi1-xO3 (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a sol-gel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a Pr of ~ 20μC/cm2 and a Vc of ~1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 9 )

Date of Publication:

Sept. 2010

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