$\hbox{PbZr}_{x}\hbox{Ti}_{1 - x}\hbox{O}_{3}$ Ferroelectric Thin-Film Capacitors for Flexible Nonvolatile Memory Applications

This letter reports the fabrication of PbZr
_x
Ti
_1-x
O
₃
(PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a sol-gel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a
P
_r
of ~ 20μC/cm
²
and a
V
_c
of ~1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.