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MOCVD \hbox {Ge}_{3}\hbox {Sb}_{2}\hbox {Te}_{5} for PCM Applications

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11 Author(s)
Zheng, J.F. ; ATMI Inc., Danbury, CT, USA ; Reed, J. ; Schell, C. ; Czubatyj, W.
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Phase-change memory devices fabricated using MOCVD-deposited 30% Ge, 20% Sb, and 50% Te atomic composition, GST325 alloy, are fully characterized. In 100-nm-size test devices, a more than 2x reduction of reset current and set resistance were demonstrated compared with equivalent devices using PVD-deposited GST225. The devices show set speeds of 175-260 ns and a ten-year data-retention temperature of 102°C, comparable with devices made using a PVD GST225 alloy. Cycle endurance of up to 7 × 109 was also demonstrated.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 9 )