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Improved Linearity for Low-Noise Applications in 0.25-  \mu\hbox {m} GaN MISHEMTs Using ALD \hbox {Al}_{2}\hbox {O}_{3} as Gate Dielectric

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7 Author(s)
Z. H. Liu ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore ; G. I. Ng ; S. Arulkumaran ; Y. K. T. Maung
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Improved device linearity for low-noise applications has been demonstrated in 0.25-μm AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) using atomic-layer-deposited (ALD) Al2O3 as gate dielectric. The measured dc transconductance, microwave small signal, and noise performance feature less dependence on drain current as compared to conventional Schottky-gate AlGaN/GaN HEMTs. Two-tone intermodulation measurement shows that the MISHEMT has a higher value of third-order intercept (IP3). The improved device linearity suggests that the ALD Al2O3/AlGaN/GaN MISHEMT on high-resistivity silicon substrate is promising for high-linearity low-noise amplifier applications.

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IEEE Electron Device Letters  (Volume:31 ,  Issue: 8 )