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340-W Peak Power From a GaSb 2- \mu m Optically Pumped Semiconductor Laser (OPSL) Grown Mismatched on GaAs

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9 Author(s)
Yi-Ying Lai ; Coll. of Opt. Sci., Univ. of Arizona, Tucson, AZ, USA ; Yarborough, J.M. ; Kaneda, Y. ; Hader, J.
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A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd : YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 16 )

Date of Publication:

Aug.15, 2010

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