By Topic

340-W Peak Power From a GaSb 2- \mu m Optically Pumped Semiconductor Laser (OPSL) Grown Mismatched on GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Yi-Ying Lai ; College of Optical Sciences, University of Arizona, Tucson, AZ, USA ; J. M. Yarborough ; Yushi Kaneda ; Jörg Hader
more authors

A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd : YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained.

Published in:

IEEE Photonics Technology Letters  (Volume:22 ,  Issue: 16 )